STW36NM60N mosfet equivalent, n-channel power mosfet.
Order code STW36NM60N
VDSS @ TJmax
650 V
RDS(on) max
< 0.105 Ω
ID 29 A
PW 210 W
* 100% avalanche tested
* Low input capacitance and gate charge
* Low ga.
– Automotive
Description
This device is made using the second generation of MDmesh™ technology. This re.
This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore.
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