STW30N80K5 Datasheet | STMicroelectronics

N-channel 800 V, 0.15 Ω typ., 24 A, MDmesh™ K5 Power MOSFET in a TO-247 package - production data Features table Order code STW30N80K5 VDS 800 V RDS(on) max. 0.18 Ω ID 24 A 3 2 1 TO-247 Figure 1: Internal schematic diagram Features - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Order code STW30N80K5 Table 1: Device summary Marking Package 30N80K5 TO-247 Packing Tube March 2016 Doc ID028638 Rev...