STW55NM60ND mosfet equivalent, n-channel mosfet.
Type STW55NM60ND
VDSS (@TJmax)
650 V
RDS(on) max
< 0.060 Ω
ID 51 A
* The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
* 100% aval.
Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generati.
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and su.
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