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STW55NM60ND Datasheet

N-channel MOSFET

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STW55NM60ND
N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET
(with fast diode) in a TO-247 package
Datasheet — production data
Features
Type
STW55NM60ND
VDSS
(@TJmax)
650 V
RDS(on)
max
< 0.060 Ω
ID
51 A
The worldwide best RDS(on) amongst the fast
recovery diode devices in TO-247
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
High dv/dt and avalanche capabilities
Application
Switching applications
Description
This FDmesh™ II Power MOSFET with intrinsic
fast-recovery body diode is produced using the
second generation of MDmesh™ technology.
Utilizing a new strip-layout vertical structure, this
revolutionary device features extremely low on-
resistance and superior switching performance. It
is ideal for bridge topologies and ZVS phase-shift
converters.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
Marking
STW55NM60ND
55NM60ND
Package
TO-247
Packaging
Tube
December 2012
This is information on a product in full production.
Doc ID 14169 Rev 3
1/12
www.st.com
12


STMicroelectronics Electronic Components Datasheet

STW55NM60ND Datasheet

N-channel MOSFET

No Preview Available !

Contents
Contents
STW55NM60ND
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 14169 Rev 3


Part Number STW55NM60ND
Description N-channel MOSFET
Maker STMicroelectronics
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STW55NM60ND Datasheet PDF






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