Datasheet Summary
N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
- production data
Features
Type STW55NM60ND
VDSS (@TJmax)
650 V
RDS(on) max
< 0.060 Ω
ID 51 A
- The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High dv/dt and avalanche capabilities
Application
- Switching applications
Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device Features...