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STW55NM60ND - N-channel MOSFET

Description

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology.

Features

  • Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A.
  • The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW55NM60ND N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet — production data Features Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A ■ The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ High dv/dt and avalanche capabilities Application ■ Switching applications Description This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance.
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