STW55NM60ND Description
This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device.
STW55NM60ND Key Features
- The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- High dv/dt and avalanche capabilities
- Switching