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STW55NM60N - N-CHANNEL MOSFET

General Description

This series of devices is designed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suitable for the most demanding high efficiency converters.

Overview

STW55NM60N N-channel 600 V, 0.047 Ω, 51 A, MDmesh™ II Power MOSFET.

Key Features

  • Type STW55NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.060 Ω ID 51 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.