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STW55NM60N - N-CHANNEL MOSFET

Description

This series of devices is designed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Type STW55NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.060 Ω ID 51 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Datasheet Details

Part number STW55NM60N
Manufacturer STMicroelectronics
File Size 301.22 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet STW55NM60N Datasheet
Additional preview pages of the STW55NM60N datasheet.

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Full PDF Text Transcription

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STW55NM60N N-channel 600 V, 0.047 Ω, 51 A, MDmesh™ II Power MOSFET TO-247 Features Type STW55NM60N VDSS (@Tjmax) 650 V RDS(on) max < 0.060 Ω ID 51 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1.
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