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STW55NM60ND - N-channel MOSFET

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General Description

This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology.

Utilizing a new strip-layout vertical structure, this revolutionary device

Overview

STW55NM60ND N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package Datasheet — production.

Key Features

  • Type STW55NM60ND VDSS (@TJmax) 650 V RDS(on) max < 0.060 Ω ID 51 A.
  • The worldwide best RDS(on) amongst the fast recovery diode devices in TO-247.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • High dv/dt and avalanche capabilities.

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