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STW50N65DM2AG - N-Channel MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

Key Features

  • Order code STW50N65DM2AG VDS 650 V RDS(on) max. 87 mΩ ID 38 A 3 2 1 TO-247 D(2, TAB).
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW50N65DM2AG Datasheet Automotive-grade N-channel 650 V, 70 mΩ typ., 38 A Power MOSFET MDmesh DM2 in a TO-247 package Features Order code STW50N65DM2AG VDS 650 V RDS(on) max. 87 mΩ ID 38 A 3 2 1 TO-247 D(2, TAB) • AEC-Q101 qualified • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications G(1) • Switching applications S(3) NG1D2TS3Z Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.