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STW52N60DM6 - N-channel Power MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.

Key Features

  • Order code VDS RDS(on) max. ID STW52N60DM6 600 V 74 mΩ 45 A.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW52N60DM6 Datasheet N‑channel 600 V, 64 mΩ typ., 45 A MDmesh DM6 Power MOSFET in a TO‑247 package 3 2 1 TO-247 D(2, TAB) G(1) S(3) AM01476v1_tab Features Order code VDS RDS(on) max. ID STW52N60DM6 600 V 74 mΩ 45 A • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series.