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STW55NM50N - N-channel MOSFET

Description

ObThis series of devices implements second -generation MDmesh™ technology.

This )revolutionary Power MOSFET associates a new t(svertical structure to the company’s strip layout to cyield one of the world’s lowest on-resistance and ugate charge.

Features

  • Type VDSS (@Tjmax) RDS(on) max ID STW55NM50N 550 V.

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Datasheet Details

Part number STW55NM50N
Manufacturer STMicroelectronics
File Size 305.39 KB
Description N-channel MOSFET
Datasheet download datasheet STW55NM50N Datasheet
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Full PDF Text Transcription

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STW55NM50N N-channel 500 V, 0.040 Ω, 54 A, MDmesh™ II Power MOSFET TO-247 Features Type VDSS (@Tjmax) RDS(on) max ID STW55NM50N 550 V <0.054 Ω 54 A t(s)■ 100% avalanche tested c■ Low input capacitance and gate charge du■ Low gate input resistance ProApplication te■ Switching applications soleDescription ObThis series of devices implements second -generation MDmesh™ technology. This )revolutionary Power MOSFET associates a new t(svertical structure to the company’s strip layout to cyield one of the world’s lowest on-resistance and ugate charge. It is therefore suitable for the most Obsolete Proddemanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1.
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