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STW8NB90 - N-CHANNEL MOSFET

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Other Datasheets by STMicroelectronics

Part Number Description
STW8NB90FI N-CHANNEL MOSFET
STW8NB100 N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET
STW8NB80 N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET
STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
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www.DataSheet4U.com N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 8A 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.