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STW8NB90FI - N-CHANNEL MOSFET

Download the STW8NB90FI datasheet PDF. This datasheet also covers the STW8NB90 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Note: The manufacturer provides a single datasheet file (STW8NB90_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
STW8NB90 N-CHANNEL MOSFET
STW8NB100 N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET
STW8NB80 N - CHANNEL 800V - 1.2ohm - 7.5A - TO-247 PowerMESH MOSFET
STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STW10NB60 N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 8A 5A TYPICAL RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.