STWA30N65DM6AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code STWA30N65DM6AG VDS 650 V RDS(on) max. 110 mΩ ID 28 A
* AEC-Q101 qualified
* Fast-recovery body diode
* Lower RDS(on) per area vs previous gener.

Application

* Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per.

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