Download the STWA70N60DM6 datasheet PDF.
This datasheet also covers the STW70N60DM6 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.
Key Features
3 2 1
TO-247
3 2 1
TO-247 long leads
D(2, TAB)
Order code
VDS
RDS(on) max. STW70N60DM6 STWA70N60DM6
600 V
42 mΩ.
Fast-recovery body diode.
Lower RDS(on) per area vs previous generation.
Low gate charge, input capacitance and resistance.
Note: The manufacturer provides a single datasheet file (STW70N60DM6-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for STWA70N60DM6 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
STWA70N60DM6. For precise diagrams, and layout, please refer to the original PDF.
STW70N60DM6, STWA70N60DM6 Datasheet N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO‑247 and TO‑247 long leads packages Features 3 2 1 TO-247 3 2 1 TO-24...
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O‑247 and TO‑247 long leads packages Features 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 62 A G(1) Applications • Switching applications S(3) Description AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.
STWA70N60DM6 Datasheet
