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STWA70N60DM6 - N-CHANNEL Power MOSFET

Download the STWA70N60DM6 datasheet PDF. This datasheet also covers the STW70N60DM6 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.

Key Features

  • 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 62 A G(1).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STW70N60DM6-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STW70N60DM6, STWA70N60DM6 Datasheet N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO‑247 and TO‑247 long leads packages Features 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 62 A G(1) Applications • Switching applications S(3) Description AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.