STWA70N60DM6
Features
3 2 1
TO-247
3 2 1
TO-247 long leads
D(2, TAB)
Order code
RDS(on) max.
STW70N60DM6 STWA70N60DM6
600 V
42 mΩ
- Fast-recovery body diode
- Lower RDS(on) per area vs previous generation
- Low gate charge, input capacitance and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
ID 62 A
G(1)
Applications
- Switching applications
S(3)
Description
AM01476v1_tab
These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. pared with the previous MDmesh fast generation, DM6 bines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Product status links STW70N60DM6, STWA70N60DM6
Product summary
STW70N60DM6
Order code
STW70N60DM6
Marking
70N60DM6
Package
TO-247
Packing
Tube
STWA70...
