STMicroelectronics STWA70N60DM2
This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | STWA70N60DM2 |
|---|---|
| Datasheet | STWA70N60DM2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 600V 66A N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
TO-247 long leads D(2, TAB) G(1) S(3) Order code VDS RDS(on) max. ID STWA70N60DM2 600 V 42 mΩ 66 A● Fast-recovery body diode
● Extremely low gate charge and input capacitance
● Low on-resistance
● 100% avalanche tested
● Extremely high dv/dt ruggedness
● Zener-protected
APPLICATIONS
● Switching applications AM01476v1_tabDESCRIPTION
Product status link STWA70N60DM2 Product summary Order code STWA70N60DM2 Marking 70N60DM2 Package TO-247 long leads Packing Tube DS11064 - Rev 3 - March 2025 For further information, contact your local STMicroelectronics sales office. STWA70N60DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1.
