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STWA70N60DM6 Datasheet – N-CHANNEL Power MOSFET

Manufacturer: STMicroelectronics

Download the STWA70N60DM6 datasheet PDF. This datasheet also includes the STW70N60DM6 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STW70N60DM6-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.

Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Product status links STW70N60DM6, STWA70N60DM6 Product summary STW70N60DM6 Order code STW70N60DM6 Marking 70N60DM6 Package TO-247 Packing Tube STWA70N60DM6 Order code STWA70N60DM6 Marking 70N60DM6 Package TO-247 long leads Packing Tube DS12274 - Rev 5 - February 2023 For further information contact your local STMicroelectronics sales office.

Overview

STW70N60DM6, STWA70N60DM6 Datasheet N-channel 600 V, 36 mΩ typ.

Key Features

  • 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 62 A G(1).

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