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TIP120 - Low voltage complementary power Darlington transistor

General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.

Key Features

  • Low collector-emitter saturation voltage TAB.
  • Complementary NPN - PNP transistors TO-220 1 23.

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TIP120, TIP121, TIP122 TIP125, TIP127 Datasheet Low voltage complementary power Darlington transistors Features • Low collector-emitter saturation voltage TAB • Complementary NPN - PNP transistors TO-220 1 23 Application • General purpose linear and switching C (2, TAB) C (2, TAB) B (1) B (1) R1 R2 R1 R2 SC07840 E (3) SC07850 E (3) NPN: R1 = 7 kΩ, R2 = 70 Ω PNP: R1 = 16 kΩ, R2 = 60 Ω Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Product status links TIP120 TIP121 TIP122 TIP125 TIP127 DS0854 - Rev 5 - May 2021 For further information contact your local STMicroelectronics sales office.