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STMicroelectronics Electronic Components Datasheet

TIP41CN Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

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TIP41CN
TIP42CN
COMPLEMENTARY SILICON POWER
TRANSISTORS
n COMPLEMENTARY PNP-NPN DEVICES
n NEW ENHANCED SERIES
n HIGH SWITCHING SPEED
n hFE GROUPING
n hFE IMPROVED LINEARITY
Figure 1: Package
PRELIMINARY DATA
APPLICATION
n GENERAL PURPOSE CIRCUITS
n AUDIO AMPLIFIER
n POWER LINEAR AND SWITCHING
DESCRIPTION
The TIP41CN is a silicon base island technology
NPN power transistor Jedec TO-220 plastic
package with improved performances than the
industry standard TIP41C that make this device
suitable for audio, power linear and switching
applications.
The complementary PNP type is TIP42CN.
3
2
1
TO-220
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Part Number
TIP41CN (#)
TIP42CN (#)
Marking
TIP41C NR
TIP41C NO
TIP41C NY
TIP42C NR
TIP42C NO
TIP42C NY
# See:note on page 2
Table 2: Absolute Maximum Ratings
Symbol
Parameter
VCBO
VCEO
VEBO
IC
ICM
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5ms)
May 2005
Package
TO-220
TO-220
Packaging
Tube
Tube
NPN
PNP
Value
TIP41CN
TIP42CN
100
100
5
6
10
Rev. 1
Unit
V
V
V
A
A
1/8


STMicroelectronics Electronic Components Datasheet

TIP41CN Datasheet

COMPLEMENTARY SILICON POWER TRANSISTORS

No Preview Available !

TIP41CN / TIP42CN
www.DataSheet4U.com
Symbol
Parameter
NPN
Value
TIP41CN
Unit
PNP
TIP42CN
IB Base Current
Ptot Total Dissipation at TC 25 oC
Tstg Storage Temperature
TJ Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
3
65
-65 to 150
150
A
W
°C
°C
Table 3: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ.
Max.
Unit
ICEO
IEBO
ICES
VCEO(sus)*
Collector Cut-off Current VCE = 60 V
(IB = 0)
Emitter Cut-off Current VEB = 5 V
(IC = 0)
Collector Cut-off Current VCE = 100 V
(VBE = 0)
Collector-Emitter
Sustaining Voltage
IC = 30 mA
0.7 mA
1 mA
0.4 mA
100 V
VCE(sat)*
(IB = 0 )
Collector-Emitter
Saturation Voltage
IC = 6 A
IB = 0.6 A
1.5 V
VBE(on)* Base-Emitter Voltage
hFE* DC Current Gain
IC = 6 A
IC = 0.3 A
VCE = 4 V
VCE = 4 V
30
2V
IC = 3 A
VCE = 4 V
Group R
15 28
Group O
24 44
Group Y
42 75
* Pulsed: Pulsed duration = 300 ms, duty cycle 2 %.
For PNP types voltage and current values are negative.
# Note: Product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery details.
2/8


Part Number TIP41CN
Description COMPLEMENTARY SILICON POWER TRANSISTORS
Maker STMicroelectronics
Total Page 8 Pages
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