TN2010H-6FP Description
Packaged in an insulated TO-220FPAB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. This insulated fullpack package allows a back to back configuration. The bination of noise immunity and low gate triggering current allows to design strong.
TN2010H-6FP Key Features
- High junction temperature: Tj = 150 °C
- Gate triggering current IGT = 10 mA
- Peak off-state voltage VDRM/VRRM = 600 V
- High turn-on current rise dI/dt = 100 A/µs
- ECOPACK®2 pliant ponent
- TO-220FPAB insulated package