TN2010H-6G Overview
This device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C. Its D²PAK package allows modern SMD designs as well as pact back to back configuration. The bination of noise immunity and low gate triggering current allows to design strong and pact control circuits.
TN2010H-6G Key Features
- High junction temperature: Tj = 150 °C
- Gate triggering current IGT = 10 mA
- Peak off-state voltage VDRM/VRRM = 600 V
- High turn on current rise dI/dt = 100 A/µs
- ECOPACK®2 pliant ponent