STMicroelectronics TN2010H-6FP
This insulated fullpack package allows a back to back configuration. The combination of noise immunity and low gate triggering current allows to design strongFEATURES
● High junction temperature: Tj = 150 °C● High noise immunity dV/dt = 400 V/µs up to 150 °C
● Gate triggering current IGT = 10 mA
● Peak off-state voltage VDRM/VRRM = 600 V
● High turn-on current rise dI/dt = 100 A/µs
● ECOPACK®2 compliant component
● TO-220FPAB insulated package: Complies with UL standards (File ref: E81734) Insulated voltage: 2000 VRMS
APPLICATIONS
● Motorbike voltage regulator circuits● Inrush current limiting circuits
● Motor control circuits and starters
● Light dimmers
● Solid state relays
DESCRIPTION
Packaged in an insulated TO-220FPAB, this device offers high thermal performance during operation of up to 20 ARMS, thanks to a junction temperature of up to 150 °C.