Datasheet Details
| Part number | U16NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 50.21 KB |
| Description | STU16NB50 |
| Datasheet |
 U16NB50 Datasheet
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| Part number | U16NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 50.21 KB |
| Description | STU16NB50 |
| Datasheet |
U16NB50 Datasheet
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Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s Max220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
STU16NB50 N-CHANNEL 600V - 0.45Ω - 10.7A - Max220 PowerMESH™ MOSFET PRELIMINARY DATA TYPE ST U16NB50 s s s s s s V DSS 500 V R DS(on) < 0.33 Ω ID 15.6 A TYPICAL RDS(on) = 0.
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