VND5N07-E
VND5N07-E is fully autoprotected Power MOSFET manufactured by STMicroelectronics.
Features
Max. on-state resistance (per ch.) Current limitation (typ) Drain-Source clamp voltage
RDS (on) ILIMH
VCLAMP
0.2Ω 5A 70V
Description
The VND5N07-E is a monolithic device designed using STMicroelectronics® VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Fault feedback can be detected by monitoring the voltage at the input pin.
- Linear current limitation
- Thermal shutdown
- Short circuit protection
- Integrated clamp
- Low current drawn from input pin
- Diagnostic feedback through input pin
- ESD protection
- Direct access to the gate of the power mosfet
(analog driving)
- patible with standard Power MOSFET
Package
DPAK IPAK
Table 1. Device summary Order codes
Tube VND5N07-E VND5N07-1-E
Tape and reel VND5N07TR-E
September 2013
This is information on a product in full production.
Doc ID025077 Rev 2
1/22
.st.
Contents
Contents
Block diagram and pin description
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Electrical specifications
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