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VNH100N04 Datasheet

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

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VNH100N04
”OMNIFET”:
FULLY AUTOPROTECTED POWER MOSFET
TYPE
Vclamp
RDS(on)
Ilim
VNH100N04
42 V
0.012
100 A
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s LINEAR CURRENT LIMITATION
s THERMAL SHUT DOWN
s SHORT CIRCUIT PROTECTION
s INTEGRATED CLAMP
s LOW CURRENT DRAWN FROM INPUT PIN
s DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
s ESD PROTECTION
s DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
s COMPATIBLE WITH STANDARD POWER
MOSFET
s STANDARD TO-218 PACKAGE
TARGET DATA
TO-218
DESCRIPTION
The VNH100N04 is a monolithic device made
using SGS-THOMSON Vertical Intelligent Power
M0 Technology, intended for replacement of
standard power MOSFETS in DC to 50 KHz
applications. Buit-in thermal shut-down, linear
current limitation and overvoltage clamp protect
the chip in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
BLOCK DIAGRAM
September 1994
1/7


STMicroelectronics Electronic Components Datasheet

VNH100N04 Datasheet

OMNIFET: FULLY AUTOPROTECTED POWER MOSFET

No Preview Available !

VNH100N04
ABSOLUTE MAXIMUM RATING
Symbol
P ar amete r
VD S Drain-source Voltage (Vin = 0)
Vin Input Voltage
ID Drain Current
IR Reverse DC Output Current
Vesd
Ptot
Electrostatic Discharge (C= 100 pF, R=1.5 K)
Total Dissipation at Tc = 25 oC
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Operating Junction Temperature
Tc Case Operating Temperature
Tstg Storage Temperature
Val ue
Internally Clamped
18
Internally Limited
-50
2000
208
Internally Limited
Internally Limited
-55 to 150
Unit
V
V
A
A
V
W
oC
oC
oC
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
0.6
30
oC/ W
oC/ W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symb ol
V CLAMP
VCLTH
VI NC L
IDSS
IISS
Parameter
Drain-source Clamp
Voltage
Drain-source Clamp
Threshold Voltage
Input-Source Reverse
Clamp Voltage
Zero Input Voltage
Drain Current (Vin = 0)
Supply Current from
Input Pin
Test Conditions
ID = 30 A Vin = 0
ID = 2 mA Vin = 0
Iin = -1 mA
VDS = 13 V
VDS = 25 V
VDS = 0 V Vin = 10 V
Min.
36
Typ.
42
35
-1
250
Max.
48
-0.3
50
200
500
Unit
V
V
V
µA
µA
µA
ON ()
Symb ol
VI S(th)
RDS(on)
Parameter
Input Threshold
Voltage
Static Drain-source On
R esist anc e
Test Conditions
VDS = Vin ID = 1 mA
Vin = 10 V ID = 30 A
Vin = 5 V ID = 30 A
Min.
0.8
Typ.
Max.
3
Unit
V
0. 012
0. 015
DYNAMIC
Symb ol
gfs ()
Coss
Parameter
Forward
Transconductance
Output Capacitance
Test Conditions
VDS = 13 V ID = 30 A
VDS = 13 V f = 1 MHz Vin = 0
Min.
Typ.
40
Max.
Unit
S
1800 3000 pF
2/7


Part Number VNH100N04
Description OMNIFET: FULLY AUTOPROTECTED POWER MOSFET
Maker STMicroelectronics
Total Page 7 Pages
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