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VNL5090N3-E - fully protected low-side driver

General Description

2 1 2 3 SOT-223 SO-8

Key Features

  • Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a saf.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNL5090N3-E VNL5090S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description 2 1 2 3 SOT-223 SO-8 Features Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.