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VNL5090S5-E - fully protected low-side driver

Download the VNL5090S5-E datasheet PDF. This datasheet also covers the VNL5090N3-E variant, as both devices belong to the same fully protected low-side driver family and are provided as variant models within a single manufacturer datasheet.

General Description

2 1 2 3 SOT-223 SO-8

Key Features

  • Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a saf.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (VNL5090N3-E-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
VNL5090N3-E VNL5090S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description 2 1 2 3 SOT-223 SO-8 Features Type VNL5090N3-E 41 V VNL5090S5-E Vclamp RDS(on) 90 mΩ ID 13 A The VNL5090N3-E and VNL5090S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.