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VNS3NV04D-E - Automotive OMNIFET II fully autoprotected Power MOSFET

General Description

The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package.

The OMNIFET II is designed using STMicroelectronics VIPower M03 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.

Key Features

  • Max on-state resistance (per ch. ) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 120 m 3.5 A 40 V.
  • AEC-Q100 qualified.

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Full PDF Text Transcription for VNS3NV04D-E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VNS3NV04D-E. For precise diagrams, and layout, please refer to the original PDF.

VNS3NV04DP-E Automotive OMNIFET II fully autoprotected Power MOSFET Datasheet - production data SO-8  Linear current limitation  Thermal shutdown  Short-circuit protec...

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 Linear current limitation  Thermal shutdown  Short-circuit protection  Integrated clamp  Low current drawn from input pin  Diagnostic feedback through input pin  ESD protection  Direct access to the gate of the Power MOSFET (analog driving)  Compatible with standard Power MOSFET Features Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 120 m 3.5 A 40 V  AEC-Q100 qualified  ECOPACK: lead free and RoHS compliant Description The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package.

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