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VNS3NV04D - FULLY AUTOPROTECTED POWER MOSFET

General Description

O The VNS3NV04D is a device formed by two - monolithic OMNIFET II chips housed in a ) standard SO-8 package.

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Full PDF Text Transcription for VNS3NV04D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VNS3NV04D. For precise diagrams, and layout, please refer to the original PDF.

® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ (*) Ilim 3.5 A (*) Vclamp 40 V (*) (*)Per each device n LINEAR CURRENT LIMITATION...

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5 A (*) Vclamp 40 V (*) (*)Per each device n LINEAR CURRENT LIMITATION ) n THERMAL SHUT DOWN t(s n SHORT CIRCUIT PROTECTION c n INTEGRATED CLAMP u n LOW CURRENT DRAWN FROM INPUT PIN d n DIAGNOSTIC FEEDBACK THROUGH INPUT ro PIN P n ESD PROTECTION te n DIRECT ACCESS TO THE GATE OF THE le POWER MOSFET (ANALOG DRIVING) o n COMPATIBLE WITH STANDARD POWER s MOSFET b DESCRIPTION O The VNS3NV04D is a device formed by two - monolithic OMNIFET II chips housed in a ) standard SO-8 package. The OMNIFET II are t(s designed in STMicroelectronics VIPower M0-3 c Technology: they are intended for replacement of u standard Power MOSFETS fro

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