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VNS3NV04D Datasheet PDF

STMicroelectronics VNS3NV04D

The VNS3NV04D is a device formed by two - monolithic OMNIFET II chips housed in a ) standard SO-8 package. The OMNIFET II are t(s designed in STMicroelectronics VIPower M0-3 c Technology: they are intended for replacement of u standard Power MOSFETS from DC up to 50KHz rod BLOCK DIAGRAM SO-8 applications.
  • Channels : 2
  • Max Operating Temp : 150°C
  • Min Operating Temp : -40°C
Source: Octopart
Part No. VNS3NV04D
Datasheet VNS3NV04D Download
Manufacturer
STMicroelectronics
Description FULLY AUTOPROTECTED POWER MOSFET
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VNS3NV04D datasheet page 1 preview

DESCRIPTION

O Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. lete P DRAIN1 bso OVERVOLTAGE O CLAMP DRAIN2 OVERVOLTAGE CLAMP INPUT1 GATE CONTROL GATE CONTROL INPUT2 OVER TEMPERATURE LINEAR CURRENT LIMITER LINEAR CURRENT LIMITER OVER TEMPERATURE SOURCE1 SOURCE2 September 2013 DocID7396 Rev 4 1/14 1 VNS3NV04D ABSOLUTE MAXIMUM RATING Symbol Parameter Value Unit VDSn Drain-source Voltage (VINn=0V) Internally Clamped V VINn Input Voltage Internally Clamped V IINn Input Current +/-20 mA RIN MINn Minimum Input Series Impedance 220 Ω IDn Drain Current Internally Limited A IRn Reverse DC Output Current -5.5 A VESD1 Electrostatic Discharge (R=1.5KΩ, C=100pF) 4000 V VESD2 Electrostatic Discharge on output pins only (R=330Ω, C=150pF) 16500 V Ptot Total Dissipation at Tc=25°C 4 W t(s) Tj Operating Junction Temperature Internally limited °C Tc Case Operating...
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