STMicroelectronics VNS3NV04D-E
The VNS3NV04DP-E device is made up of two monolithic chips (OMNIFET II) housed in a standard SO-8 package. The OMNIFET II is designed using STMicroelectronics VIPower M03 technology and is intended for replacement of standard Power MOSFETs in up to 50 kHz DC applications.| Part No. | VNS3NV04D-E |
|---|---|
| Datasheet | VNS3NV04D-E Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive OMNIFET II fully autoprotected Power MOSFET |
| Buy | Stock & Price |
FEATURES
Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 120 m 3.5 A 40 V● AEC-Q100 qualified
● ECOPACK: lead free and RoHS compliant
DESCRIPTION
Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin. Package SO-8 Table 1. Device summary Order codes Tray Tape and reel VNS3NV04DP-E VNS3NV04DPTR-E July 2023 This is information on a product in full production. DS7131 Rev 3 1/21 Contents Contents VNS3NV04DP-E 1 Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2.2 Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
