W18NK80Z Datasheet, STMicroelectronics

Type STW18NK80Z
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* VDSS 800V RDS(on) <0.38Ω ID 19A pW 350W Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Ver.

Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Internal schem.

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the mo.