Datasheet Details
| Part number | W8NB90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 258.86 KB |
| Description | STW8NB90 |
| Datasheet |
 W8NB90 Datasheet
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| Part number | W8NB90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 258.86 KB |
| Description | STW8NB90 |
| Datasheet |
W8NB90 Datasheet
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Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
www.DataSheet4U.com www.DataSheet4U.com N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.45 Ω < 1.45 Ω ID 8A 5A TYPICAL RDS(on) = 1.
| Part Number | Description |
|---|---|
| W8NB100 | STW8NB100 |
| W8NB80 | STW8NB80 |