Y60NK30Z Datasheet | STMicroelectronics

DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH EFFICIENCY SWITCHING DC/DC CONVETERS FOR PLASMA TV’s s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC ORDERING INFORMATION SALES TYPE STY60NK30Z MARKING Y60NK30Z PACKAGE Max247 PACKAGING TUBE February 2004 1/8 Free Datasheet http://.. STY60NK30Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100 p F, R=1.5 KΩ) Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature Value 300 300 ± 30 60 37.5 240 450 3.57 6000 4.5 -55 to 150 Unit V V V A A A W W/°C V V/ns °C ( ) Pulse width limited by safe operating area (1) ISD ≤60A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX. THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.28 30 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 60 0.7 Unit A J GATE-SOURCE ZENER DIODE Symbol BVGSO Parameter Gate-Source Breakdown Voltage Test Conditions Igs=± 1m A (Open Drain) Min. 30 Typ. Max. Unit V PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in...