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Y60NK30Z - STY60NK30Z

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/8 Free Datas.

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Datasheet Details

Part number Y60NK30Z
Manufacturer STMicroelectronics
File Size 210.89 KB
Description STY60NK30Z
Datasheet download datasheet Y60NK30Z Datasheet
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Full PDF Text Transcription

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STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH™Power MOSFET TYPE STY60NK30Z s s s s s s VDSS 300 V RDS(on) < 0.045 Ω ID 60 A Pw 450 W TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY Max247 2 1 3 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.
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