Y60NK30Z Datasheet - STMicroelectronics

STY60NK30Z

Y60NK30Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

Y60NK30Z General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

Y60NK30Z Datasheet (210.89 KB)

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Y60NK30Z

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STMicroelectronics ↗

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Sty60nk30z.
STY60NK30Z N-CHANNEL 300V - 0.033Ω - 60A Max247 Zener-Protected SuperMESH™Power MOSFET TYPE STY60NK30Z s s s s s s VDSS 300 V RDS(on) < 0.045 Ω ID .

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Y60NK30Z Features

Y60NK30Z General Description

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