FLM5359-8F
Key Features
- High Output Power: P1dB = 39.5dBm (Typ.)
- High Gain: G1dB = 9.5dB (Typ.)
- High PAE: hadd = 36% (Typ.)
- Broad Band: 5.3 to 5.9GHz
- The drain-source operating voltage (V DS ) should not exceed 10 volts
- Part: FLM5359-8F
- Description: C-Band Internally Matched FET
- Manufacturer: SUMITOMO
- Size: 431.06 KB