FLM5359-35F Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B=45.5d Bm(Typ.) - High Gain: G1d B=9.0d B(Typ.) - High PAE: hadd=35%(Typ.) - Broad Band: 5.3 to 5.9GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The FLM5359-35F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 115.4 -65 to +175 175 Limit <= 10 <= 107.2 >=-23.2 Unit V V W deg.C deg.C Unit V m A m A REMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=13ohm Reverse Gate Current IGR RG=13ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-Added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1d B G1d B Idsr hadd DG Rth DTch Min. VDS=5V, V GS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960m A -1.0 IGS=-960u A -5.0 45.0 VDS=10V 8.0 f=5.3 to 5.9 GHz IDS=0.5 Idss (Typ.) Zs =ZL=50ohm Channel to Case 10V x Idsr x Rth G.C.P.:Gain pression Point, IK Test Conditions Limit Unit Typ. Max. 16.0 24.0 A 8000 m S -2.0 -3.5 V V 45.5 d Bm 9.0 d B 8.5 9.5 A 35 % 1.2 d B 1.1 1.3 deg.C/W 100 deg.C S.C.L.:Single Carrier Level Class 3A ESD Note : Based on EIAJ ED-4701 C-111A (C=100p F, R=1.5kohm) Ro HS pliance Yes 4000V to 8000V Edition 1.4 Oct. 2012 C-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs INPUT POWER Vds=10V, Ids=0.5Idss, f=5.6GHz Power Added Efficiency [%] Input Power [d Bm] Pin=38d Bm 36d Bm 34d Bm 32d Bm POWER DERATING CURVE Total Power Dissipation [W] Case Temperature [deg.C] OUTPUT POWER vs FREQUENCY VDS=10V,...