FLM5359-45F Datasheet | SUMITOMO

FEATURES - High Output Power: P1d B=46.5d Bm(Typ.) - High Gain: G1d B=8.5d B(Typ.) - High PAE: hadd=36%(Typ.) - Broad Band: 5.3 to 5.9GHz - Impedance Matched Zin/Zout = 50ohm - Hermetically Sealed Package DESCRIPTION The FLM5359-45F is a power Ga As FET that is internally matched for standard munication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Total Power Dissipation PT Storage Temperature Tstg Channel Temperature Tch Rating 15 -5 150 -65 to +175 175 Limit <= 12 <= 107.2 >=-23.2 Unit V V W deg.C deg.C Unit V m A m A REMENDED OPERATING CONDITION (Case Temperature Tc=25deg.C) Item Symbol Condition DC Input Voltage VDS Forward Gate Current IGF RG=13ohm Reverse Gate Current IGR RG=13ohm ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Power at 1d B G.C.P. Power Gain at 1d B G.C.P. Drain Current Power-Added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise CASE STYLE Symbol IDSS gm Vp VGSO P1d B G1d B Idsr hadd DG Rth DTch Condition VDS=5V, V GS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960m A IGS=-960u A VDS=12V IDS(DC)=8.0A (typ.) f= 5.3 to 5.9 GHz Zs =ZL=50 ohm Channel to Case 12V x IDS(DC) x Rth IK Limit Unit Min. Typ. Max. 16.0 A 8000 m S -1.0 -2.0 -3.5 V -5.0 V 46.0 46.5 d Bm 7.5 8.5 d B 8.5 10.0 A 36 % 1.4 d B 0.8 1.0 deg.C/W 100 deg.C G.C.P.: Gain pression Point Class 3A ESD Note : Based on EIAJ ED-4701 C-111A (C=100p F, R=1.5kohm) Ro HS pliance Yes 4000V to 8000V Edition 1.3 Oct. 2012 C-Band Internally Matched FET OUTPUT POWER & POWER ADDED EFFICIENCY vs INPUT POWER VDS=12V, IDS=8.0A, f=5.6GHz POWER DERATING CURVE Total Power Dissipation [W] Case Temperature [deg.C] Input Power (d Bm) OUTPUT POWER vs FREQUENCY VDS=12V, IDS=8.0A Output Power [d Bm] Frequency [GHz] Edition 1.3 Oct. 2012 Power Added Efficiency...