FLM5359-45F Overview
Key Specifications
Description
The FLM5359-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. Ite m Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V Total Pow er Dissipation PT 115.4 W Storage Tem perature Ts tg -65 to +175 oC Channel Tem perature Tch 175 oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25oC) Ite m Sym bol Condition Lim it Unit DC Input Voltage Forw ard Gate Current Reverse Gate Current VDS IGF RG=13 ohm IGR RG=13 ohm ≤12 V ≤107.2 mA ≥-23.2 mA Ite m Sym bol Condition Drain Current Tr ans conductance Pinch-off Voltage Gate-Source Breakdow n Voltage Output Pow er at 1dB G.C.P.
Key Features
- High Output Power: P1dB=46.5dBm(Typ.)
- High Gain: G1dB=8.5dB(Typ.)
- High PAE: ηadd=36%(Typ.)
- Broad Band: 5.3~5.9GHz
- Impedance Matched Zin/Zout = 50Ω
