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FLU10ZME1 Datasheet Preview

FLU10ZME1 Datasheet

L-Band Medium & High Power GaAs FET

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FLU10ZME1
L-Band Medium & High Power GaAs FET
FEATURES
High Output Power: P1dB=29.5dBm(typ.)
High Gain: G1dB=13.0dB(typ.)
Low Cost Plastic(SMT) Package
Tape and Reel Available
DESCRIPTION
The FLU10ZME1 is a GaAs FET designed for base station and CPE
application up to a 3.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C)
Item
Symbol
Rating
Drain-Source Voltage
VDS
15
Gate-Soutce Voltage
VGS
-5
Total Power Dissipation
PT
6.9
Storage Temperature Tstg -55 to +150
Channel Temperature
TCH
175
Unit
V
V
W
deg.C
deg.C
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25deg.C)
Item
DC Input Voltage
Channel Temperature
Forward Gate Current
Reverse Gate Current
Gate Resistance
Symbol
VDS
Tch
IGF
IGR
Rg
Condition
10
145
4.8
-0.5
400
Unit
V
deg.C
mA
mA
ohm
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25deg.C)
Item
Drain Current
Trans Conductance
Pinch-off Voltage
Symbol
IDSS
gm
Vp
Test Conditions
VDS=5V,VGS=0V
VDS=5V,IDS=200mA
VDS=5V,IDS=15mA
Min.
-
-
-1.0
Limit
Typ.
300
150
-2.0
Gate-Source Breakdown
Voltage
VGSO
IGS=-15µA
-5 -
Max.
450
-
-3.5
-
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V
f=2.0GHz
IDS=0.6IDSS(Typ.)
28.5 29.5 - dBm
12.0 13.0 - dB
Thermal Resistance
Rth Channel to Case
- 15 18 deg.C/W
CASE STYLE: ZM
G.C.P.:Gain Compression Point
Note1: Product supplied to this specification are 100% DC performance tested.
Note2:The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class II
500 to 1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kohm)
Edition 1.1
Apr. 2012
1




SUMITOMO

FLU10ZME1 Datasheet Preview

FLU10ZME1 Datasheet

L-Band Medium & High Power GaAs FET

No Preview Available !

Edition 1.1
Apr. 2012
FLU10ZME1
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
8
7
6
5
4
3
2
1
0
0 50 100 150
Case Temperature [deg.C]
200
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
f=2.0G H z VD S=10V ID S=0.6ID SS
34
100
32
30 80
28 Pout
26
60
24
22 40
20
18
ηadd
20
16
14 0
2 4 6 8 10 12 14 16 18 20
Input P ow er [dB m ]
2


Part Number FLU10ZME1
Description L-Band Medium & High Power GaAs FET
Maker SUMITOMO
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