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FLU10ZME1 - L-Band Medium & High Power GaAs FET

General Description

The FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range.

This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.

Key Features

  • High Output Power: P1dB=29.5dBm(typ. ) High Gain: G1dB=13.0dB(typ. ) Low Cost Plastic(SMT) Package Tape and Reel Available.

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Datasheet Details

Part number FLU10ZME1
Manufacturer SUMITOMO
File Size 154.39 KB
Description L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLU10ZME1 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High Gain: G1dB=13.0dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25deg.C) Item Symbol Rating Drain-Source Voltage VDS 15 Gate-Soutce Voltage VGS -5 Total Power Dissipation PT 6.9 Storage Temperature Tstg -55 to +150 Channel Temperature TCH 175 Unit V V W deg.C deg.