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FLU17ZME1 - L-Band Medium & High Power GaAs FET

General Description

The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range.

This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications.

Key Features

  • High Output Power: P1dB=32.5dBm(typ. ) High Gain: G1dB=12.5dB(typ. ) Low Cost Plastic(SMT) Package Tape and Reel Available.

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Datasheet Details

Part number FLU17ZME1
Manufacturer SUMITOMO
File Size 191.50 KB
Description L-Band Medium & High Power GaAs FET
Datasheet download datasheet FLU17ZME1 Datasheet

Full PDF Text Transcription for FLU17ZME1 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for FLU17ZME1. For precise diagrams, and layout, please refer to the original PDF.

FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm(typ.) High Gain: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Avai...

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in: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C) Item Drain-Source Voltage Symbol VDS Rating 15 Gate-Soutce Voltage VGS -5 Total Power Dissipation PT 8.

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