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FLU17ZME1 Datasheet Preview

FLU17ZME1 Datasheet

L-Band Medium & High Power GaAs FET

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FLU17ZME1
L-Band Medium & High Power GaAs FET
FEATURES
High Output Power: P1dB=32.5dBm(typ.)
High Gain: G1dB=12.5dB(typ.)
Low Cost Plastic(SMT) Package
Tape and Reel Available
DESCRIPTION
The FLU17ZME1 is a GaAs FET designed for base station and CPE
application up to a 4.0GHz frequency range. This is a new product
series using a plastic surface mount package that has been optimized
for high volume cost driven applications.
SEDI’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C)
Item
Drain-Source Voltage
Symbol
VDS
Rating
15
Gate-Soutce Voltage
VGS
-5
Total Power Dissipation
PT
8.3
Storage Temperature Tstg -55 to +150
Channel Temperature
Tch
150
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 deg.C)
Unit
V
V
W
deg.C
deg.C
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Symbol
VDS
IGF
IGR
Condition
10
9.6
-1.0
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 deg.C)
Item
Drain Current
Trans Conductance
Pinch-off Voltage
Gate-Source Breakdown
Voltage
Symbol
IDSS
gm
Vp
VGSO
Test Conditions
VDS=5V,VGS=0V
VDS=5V,IDS=400mA
VDS=5V,IDS=30mA
IGS=-30µA
Min.
-
-
-1.0
-5
Limit
Typ.
600
300
-2.0
-
Max.
900
-
-3.5
-
Unit
mA
mS
V
V
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
P1dB
G1dB
VDS=10V
f=2.0GHz
IDS=0.6IDSS(Typ.)
31.5 32.5 - dBm
11.5 12.5 - dB
Thermal Resistance
Rth Channel to Case
- 12 15 deg.C/W
CASE STYLE: ZM
G.C.P.:Gain Compression Point
Note1: Product supplied to this specification are 100% DC performance tested.
Note2:The RF parameters are measured on a lot basis by sample testing 10 pcs/lot.
Acceptance Criteria:(accept/reject)=(0/1). Any lot failure shall be 100% retested.
ESD
Class II
500 to 1999 V
Note : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5kohm)
Edition 1.1
Apr. 2012
1




SUMITOMO

FLU17ZME1 Datasheet Preview

FLU17ZME1 Datasheet

L-Band Medium & High Power GaAs FET

No Preview Available !

FLU17ZME1
L-Band Medium & High Power GaAs FET
POWER DERATING CURVE
9
8
7
6
5
4
3
2
1
0
0 20 40 60 80 100 120 140 160
Case Temperatur[d] eg.C]
OUTPUT POWER , POWER ADDED EFFICIENCY
vs. INPUT POWER
f=2.0GHz VDS=10V IDS=0.6IDSS
36 100
34
32
30 Pout
28
80
60
26
24 40
22
20
ηadd
20
18
16 0
4 6 8 10 12 14 16 18 20 22 24
Input Power [dBm]
SMALL SIGNAL R.L. vs FREQUENCY
Wide Band Tuning (1.8GHz to2.2GHz)
15 14
10 12
5 10
08
-5 6
-10 4
-15 2
-20 0
-25 -2
-30 -4
-35 -6
1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2
Frequency [GHz]
S11 S12 S22 S21
Edition 1.1
Apr. 2012
2


Part Number FLU17ZME1
Description L-Band Medium & High Power GaAs FET
Maker SUMITOMO
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