• Part: FLU17ZME1
  • Description: L-Band Medium & High Power GaAs FET
  • Manufacturer: SUMITOMO
  • Size: 191.50 KB
Download FLU17ZME1 Datasheet PDF
SUMITOMO
FLU17ZME1
FEATURES - High Output Power: P1d B=32.5d Bm(typ.) - High Gain: G1d B=12.5d B(typ.) - Low Cost Plastic(SMT) Package - Tape and Reel Available DESCRIPTION The FLU17ZME1 is a Ga As FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product series using a plastic surface mount package that has been optimized for high volume cost driven applications. SEDI’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 deg.C) Item Drain-Source Voltage Symbol VDS Rating 15 Gate-Soutce Voltage -5 Total Power Dissipation Storage Temperature Tstg -55 to +150 Channel Temperature Tch REMENDED OPERATING CONDITION(Case Temperature Tc=25 deg.C) Unit V V W deg.C deg.C Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR Condition ≦10 ≦9.6 ≧-1.0 Unit V m A m A ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25...