SPN125T06 Description
The SPN125T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN125T06 Key Features
- 60V/125A , RDS(ON)=4.3mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L