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SPN125T06 - N-Channel MOSFET

General Description

The SPN125T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • 60V/125A , RDS(ON)=4.3mΩ@VGS=10V 60V/125A , RDS(ON)=5.6mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-251S-3L/TO-252-2L /PPAK5x6-8L/TO-263-2L package design 2020/04/28 Ver 5 Page 1 SPN125T06 N-Channel Enhancement Mode MOSFET PIN.

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Datasheet Details

Part number SPN125T06
Manufacturer SYNC POWER
File Size 472.01 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN125T06 Datasheet

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SPN125T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN125T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  AC/DC Synchronous Rectifier  Load Switch  UPS  Motor Control  Power Tool FEATURES  60V/125A , RDS(ON)=4.3mΩ@VGS=10V 60V/125A , RDS(ON)=5.6mΩ@VGS=4.