Datasheet Summary
N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN120T06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
APPLICATIONS
- DC/DC Converter
- Load Switch
- Synchronous Buck Converter
- UPS
- Motor Control
- Power Tool
Features
- 60V/108A,RDS(ON)=4.9mΩ@VGS=10V
- 60V/108A,RDS(ON)=7.5mΩ@VGS=4.5V
- Super high density cell design for extremely low
RDS (ON)
-...