SPN120T06 Description
The SPN120T06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high-side switching.
SPN120T06 Key Features
- 60V/108A,RDS(ON)=4.9mΩ@VGS=10V
- 60V/108A,RDS(ON)=7.5mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- TO-220-3L/TO-220F-3L/TO-252-2L package