SPN125T10 Description
The SPN125T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN125T10 Key Features
- 100V/112A, RDS(ON)=4.2mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC current
- TO-220-3L/TO-220F-3L/PPAK5x6-8L/TO-262-3L/