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SPN1443 Datasheet Preview

SPN1443 Datasheet

N-Channel Enhancement Mode MOSFET

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SPN1443
N-Channel Enhancement Mode MOSFET
DESCRIPTION
The SPN1443 is the N-Channel logic enhancement mode
power field effect transistors are produced using high cell
density , DMOS trench technology.
This high density process is especially tailored to
minimize on-state resistance.
These devices are particularly suited for low voltage
application such as cellular phone and notebook
computer power management and other battery powered
circuits, and low in-line power loss are needed in a very
small outline surface mount package.
APPLICATIONS
Power Management in Note book
Portable Equipment
Battery Powered System
DC/DC Converter
Load Switch
DSC
LCD Display inverter
FEATURES
30V/2.8A,RDS(ON)= 65mΩ@VGS=10V
30V/2.3A,RDS(ON)= 90mΩ@VGS=4.5V
Super high density cell design for extremely low
RDS (ON)
Exceptional on-resistance and maximum DC
current capability
SOT-323 ( SC70 ) package design
PIN CONFIGURATION ( SOT-323 ; SC-70 )
PART MARKING
2016/03/16 Ver.3
Page 1




SYNC POWER

SPN1443 Datasheet Preview

SPN1443 Datasheet

N-Channel Enhancement Mode MOSFET

No Preview Available !

SPN1443
N-Channel Enhancement Mode MOSFET
PIN DESCRIPTION
Pin
1
2
3
Symbol
G
S
D
ORDERING INFORMATION
Part Number
Package
SPN1443S32RGB
SOT-323
Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 )
SPN1443S32RGB : Tape Reel ; Pb Free; Halogen Free
Description
Gate
Source
Drain
Part Marking
43YW
ABSOULTE MAXIMUM RATINGS
(TA=25Unless otherwise noted)
Parameter
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current(TJ=150)
Pulsed Drain Current
TA=25
TA=70
Continuous Source Current(Diode Conduction)
Power Dissipation
TA=25
TA=70
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
2.8
2.3
10
1.25
0.33
0.21
150
-55/150
100
Unit
V
V
A
A
A
W
/W
2016/03/16 Ver.3
Page 2


Part Number SPN1443
Description N-Channel Enhancement Mode MOSFET
Maker SYNC POWER
Total Page 8 Pages
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