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SPN100T12 - N-Channel MOSFET

General Description

APPLICATIONS The SPN100T12 is the N-Channel enhancement mode DC/DC Converter power field effect transistor which is produced using

high cell density DMOS trench technology.

process is resistance.

Key Features

  • 120V/100A , RDS(ON)=10mΩ@VGS=10V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/PPAK5x6-8L package design PIN.

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Datasheet Details

Part number SPN100T12
Manufacturer SYNC POWER
File Size 291.08 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN100T12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN100T12 N-Channel Enhancement Mode MOSFET DESCRIPTION APPLICATIONS The SPN100T12 is the N-Channel enhancement mode  DC/DC Converter power field effect transistor which is produced using  Load Switch high cell density DMOS trench technology. This high  density on-state process is resistance. especially tailored to minimize These devices are particularly   SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.