SPN3400 Key Features
- 30V/5.4A,RDS(ON)=38mΩ@VGS=10V
- 30V/4.6A,RDS(ON)=42mΩ@VGS=4.5V
- 30V/3.8A,RDS(ON)=55mΩ@VGS=2.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- SOT-23-3L package design
- Part: SPN3400
- Manufacturer: SYNC POWER
- Size: 337.62 KB
Related SYNC POWER Datasheets
| Part Number | Description |
|---|---|
| SPN3400W | N-Channel MOSFET |
| SPN3402 | N-Channel MOSFET |
| SPN3402W | N-Channel MOSFET |
| SPN3406 | N-Channel MOSFET |
| SPN340N06 | N-Channel Enhancement Mode MOSFET |
SPN3400 Description
The SPN3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook puter power management and other battery powered circuits, and low in-line power loss are...
SPN3400 Applications
- Power Management in Note book