SPN340N06 Description
The SPN340N06 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits.
SPN340N06 Key Features
- 60V/340A, RDS(ON)=2.1mΩ@VGS=10V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- Enhanced Avalanche Ruggedness
- TO-220-3L/PPAK5x6 package design