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SPN4906 - N-Channel MOSFET

General Description

The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Key Features

  • N-Channel 40V/6.0A,RDS(ON)=45mΩ@VGS=10V 40V/5.0A,RDS(ON)=54mΩ@VGS=4.5V 40V/4.5A,RDS(ON)=83mΩ@VGS=2.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOP.
  • 8 package design PIN.

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Datasheet Details

Part number SPN4906
Manufacturer SYNC POWER
File Size 449.08 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN4906 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN4906 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 40V/6.0A,RDS(ON)=45mΩ@VGS=10V 40V/5.0A,RDS(ON)=54mΩ@VGS=4.