SPN4920A - N-Channel MOSFET

SYNC POWER

General Description

The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOP.
8P package design.

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Datasheet Details

Part number	SPN4920A
Manufacturer	SYNC POWER
File Size	265.87 KB
Description	N-Channel MOSFET
Datasheet	SPN4920A Datasheet

Full PDF Text Transcription for SPN4920A (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SPN4920A. For precise diagrams, and layout, please refer to the original PDF.

SPN4920A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high ce...

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ncement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.

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