SPN4920A Datasheet | SYNC POWER

DESCRIPTION The SPN4920A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook puter power management and other battery powered circuits where high-side switching . FEATURES ‹ 30V/6.8A,RDS(ON)= 35mΩ@VGS= 10V ‹ 30V/5.8A,RDS(ON)= 45mΩ@VGS= 4.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP - 8P package design APPLICATIONS z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LCD Display inverter PIN CONFIGURATION(SOP - 8P) .. PART MARKING 2007/ 09 / 30 Ver.1 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 ORDERING INFORMATION Part Number SPN4920AS8RG SPN4920AS8TG ※ SPN4920AS8RG : 13” Tape Reel ; Pb - Free ※ SPN4920AS8TG : Tube ; Pb - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter .. Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 Package SOP- 8P SOP- 8P Part Marking SPN4920A SPN4920A Symbol VDSS VGSS TA=25℃ TA=70℃ ID IDM IS TA=25℃ TA=70℃ PD TJ TSTG RθJA Typical 30 ±20 Unit Drain-Source Voltage Gate - Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient V V A A A W ℃ ℃ ℃/W 6.8 5.8 35 1.7 2.8 1.8 -55/150 -55/150 65 2007/ 09 / 30 Ver.1 Page 2 N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State...