SPN4972 - N-Channel MOSFET

SYNC POWER

General Description

The SPN4972 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

。 30V/8.5A,RDS(ON)=14mΩ@VGS=10V 。 30V/7.8A,RDS(ON)=18mΩ@VGS=4.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
SOP.
8 package design.

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SPN4972 n-channel mosfet by SYNC POWER - Datasheet Preview

Datasheet Details

Part number	SPN4972
Manufacturer	SYNC POWER
File Size	543.51 KB
Description	N-Channel MOSFET
Datasheet	SPN4972 Datasheet

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Full PDF Text Transcription (Reference)

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SPN4972 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4972 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES 。 30V/8.5A,RDS(ON)=14mΩ@VGS=10V 。 30V/7.8A,RDS(ON)=18mΩ@VGS=4.