Datasheet Details
| Part number | SPN4906 |
|---|---|
| Manufacturer | SYNC POWER |
| File Size | 449.08 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 SPN4906 Datasheet
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General Description
The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- N-Channel 40V/6.0A,RDS(ON)=45mΩ@VGS=10V 40V/5.0A,RDS(ON)=54mΩ@VGS=4.5V 40V/4.5A,RDS(ON)=83mΩ@VGS=2.5V.
- Super high density cell design for extremely low RDS (ON).
- Exceptional on-resistance and maximum DC current capability.
- SOP.
- 8 package design PIN.