SPN4906 Datasheet | SYNC POWER

DESCRIPTION The SPN4906 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS - Power Management in Note book - Portable Equipment - Battery Powered System - DC/DC Converter - Load Switch - DSC - LCD Display inverter FEATURES - N-Channel 40V/6.0A,RDS(ON)=45mΩ@VGS=10V 40V/5.0A,RDS(ON)=54mΩ@VGS=4.5V 40V/4.5A,RDS(ON)=83mΩ@VGS=2.5V - Super high density cell design for extremely low RDS (ON) - Exceptional on-resistance and maximum DC current capability - SOP- 8 package design PIN CONFIGURATION(SOP- 8) PART MARKING 2020/03/24 Ver.2 Page 1 N-Channel Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 7 8 Symbol S1 G1 S2 G2 D2 D2 D1 D1 Description Source 1 Gate 1 Source 2 Gate 2 Drain 2 Drain 2 Drain 1 Drain 1 ORDERING INFORMATION Part Number Package SPN4906S8RGB SOP-8 ※ SPN4906S8RGB 13” Tape Reel ; Pb - Free ; Halogen - Free ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate - Source...