Datasheet Details
| Part number | SPN6338 |
|---|---|
| Manufacturer | SYNC POWER |
| File Size | 345.33 KB |
| Description | Dual N-Channel MOSFET |
| Datasheet |
 SPN6338 Datasheet
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General Description
The SPN6338 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
Key Features
- N-Channel 30V/0.95A,RDS(ON)=550mΩ@VGS=4.5V 30V/0.75A,RDS(ON)=650mΩ@VGS=2.5V 30V/0.65A,RDS(ON)=850mΩ@VGS=1.8V.
- Super high density cell design for extremely low RDS (ON).
- Exceptional on-resistance and maximum DC current capability.
- ESD protected.
- SOT-363 (SC-70-6L) package design PIN.