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SPN6338A - Dual N-Channel Enhancement Mode MOSFET

Description

The SPN6338A is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

Features

  • N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • ESD protected.
  • SOT-363 (SC-70-6L) package design PIN.

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Datasheet Details

Part number SPN6338A
Manufacturer SYNC POWER
File Size 342.88 KB
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN6338A Datasheet
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SPN6338A Dual N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6338A is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS  Power Management in Note book  Portable Equipment  Battery Powered System  DC/DC Converter  Load Switch  DSC  LCD Display inverter FEATURES  N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.
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