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SPN6561 Datasheet Dual N-Channel MOSFET

Manufacturer: SYNC POWER

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Datasheet Details

Part number SPN6561
Manufacturer SYNC POWER
File Size 306.81 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SPN6561 Datasheet

General Description

The SPN6561 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.

These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

Overview

SPN6561 Dual N-Channel Enhancement Mode MOSFET.

Key Features

  • N-Channel 30V/2.8A,RDS(ON)=60mΩ@VGS=10V 30V/2.3A,RDS(ON)=80mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23-6L package design PIN.

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